In the paper, we investigate the structure and electronic properties of the pristine germanene nanoribbon and four adsorption configurations of 1F and 2F on the substrate of germanene nanoribbon. We obtained the parameters of the most stable structures of pristine germanene nanoribbon and four adsorption configurations. The band structure and the density of state and the part density of state for each element were also obtained. Findings show the adsorption configuration of 1F-GeNR.bridge has no band structure, while other configurations are semimetals with band gap from 0.175eV to 0.67eV; both four adsorption configurations are chemisorption and non-magnetic. The charge distribution of all configurations also was investigated; it showed that there is a charge shift from Ge atoms towards F atoms due to their electronegativity difference.

Applying first-principles calculations, the investigation of the geometrical and electronic properties of Pr adsorption armchair silicene nanoribbons structure has been established. The results show that the bandgap doped Pr has been changed, which is the case for chemical adsorption on the surface of ASiNRs; this material became metallic with the peak of valance band contact fermi level. Moreover, the survey to find the optimal height 1.82 Å of Pr and 2.24 Å bond length Si-Si, and Si-Si-Si bond angle 108005’, energy adsorption is -7.65 eV, buckling is 0.43 Å with structure stability close to the pristine case, has brought good results for actively creating newly applied materials for the spintronic and optoelectronics field in the future.