Investigating the characteristics of the three-step sorption of Sc on armchair silicene nanoribbons is the aim of this study. Since absorbed energy is the largest of the bridge, hollow, valley, and top positions, the hollow position is selected first. The structural state of the second step has an energy of adsorption of 4.18 Å and a bond length of 2.36 Å for Si-Si. Finally, ASiNRs with a high Sc atom had their 1.25 Å surface modified. Adsorbed ASiNRs resulted in new materials with semi-metal and magnetic characteristics, suggesting potential use in spintronic and electronic devices in the future.

Applying first-principles calculations, the investigation of the geometrical and electronic properties of Pr adsorption armchair silicene nanoribbons structure has been established. The results show that the bandgap doped Pr has been changed, which is the case for chemical adsorption on the surface of ASiNRs; this material became metallic with the peak of valance band contact fermi level. Moreover, the survey to find the optimal height 1.82 Å of Pr and 2.24 Å bond length Si-Si, and Si-Si-Si bond angle 108005’, energy adsorption is -7.65 eV, buckling is 0.43 Å with structure stability close to the pristine case, has brought good results for actively creating newly applied materials for the spintronic and optoelectronics field in the future.